Ti2AlN thin films synthesized by annealing of (Ti plus Al)/AlN multilayers

被引：27
|
作者：
Cabioch, Thierry [1 ]
Alkazaz, Malaz [1 ]
Beaufort, Marie-France [1 ]
Nicolai, Julien [1 ]
Eyidi, Dominique [1 ]
Eklund, Per [1 ,2 ]
机构：
[1] Univ Poitiers, UPR 3346, Inst Pprime, SP2MI Blvd 3,Teleport 2 BP 30179, F-86962 Futuroscope, France
[2] Linkoping Univ, IFM, Thin Film Phys Div, S-58183 Linkoping, Sweden
来源：
MATERIALS RESEARCH BULLETIN | 2016年 / 80卷
基金：
欧洲研究理事会;
关键词：
Annealing; MAX phases; Thin films; Multilayer; OHMIC CONTACTS; DEGREES-C; CRYSTALLIZATION KINETICS; M(N+1)AX(N) PHASES; SPUTTER-DEPOSITION; MATERIALS SCIENCE; CR2ALC; TI3SIC2; TI; STEM;
D O I：
10.1016/j.materresbull.2016.03.031
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Single-phase Ti2AlN thin films were obtained by annealing in vacuum of (Ti + Al)/AIN multilayers deposited at room temperature by magnetron sputtering onto single-crystalline (0001) 4H-SiC and (0001) Al2O3 substrates. In-situ X-ray diffraction experiments combined with ex-situ cross-sectional transmission electron microscopy observations reveal that interdiffusion processes occur in the multilayer at a temperature of similar to 400 degrees C leading to the formation of a (Ti, Al, N) solid solution, having the hexagonal structure of alpha-Ti, whereas the formation of Ti2AlN occurs at 550-600 degrees C. Highly oriented (0002) Ti2AlN thin films can be obtained after an annealing at 750 degrees C. (C) 2016 Elsevier Ltd. All rights reserved.
引用
收藏
页码：58 / 63
页数：6
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