Low temperature photo-oxidation of silicon using a xenon excimer lamp

被引：47

作者：

Zhang, JY

Boyd, IW

机构：

[1] Electron. and Electrical Engineering, University College London, London WC1E 7JE, Torrington Place

来源：

APPLIED PHYSICS LETTERS | 1997年 / 71卷 / 20期

关键词：

D O I：

10.1063/1.120230

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

Low temperature (250 degrees C) photo-oxidation of silicon initiated by a Xe-2* excimer lamp operating at a wavelength of 172 nm has been investigated. The induced reaction rate of 0.1 nm/min is 90 times greater than thermal oxidation at 612 degrees C and more than three times greater than that previously obtained at 350 degrees C using a low pressure mercury lamp. It was found to be strongly dependent upon oxygen pressure with the highest rates being achievable below 10 mbar. Ellipsometry, Fourier transform infrared spectroscopy. capacitance-voltage. and current-voltage measurements have been employed to characterize the oxide films and designate them as high quality. (C) 1997 American Institute of Physics.

引用

页码：2964 / 2966

页数：3

共 19 条

[1] LOW-PRESSURE PHOTODEPOSITION OF SILICON-NITRIDE FILMS USING A XENON EXCIMER LAMP [J].