Structure of atomically perfect lines of bismuth in the Si(001) surface

被引：27
作者：
Bowler, DR [1 ]
机构：
[1] UCL, Dept Phys & Astron, London WC1E 6BT, England
来源：
PHYSICAL REVIEW B | 2000年 / 62卷 / 11期
关键词：
D O I：
10.1103/PhysRevB.62.7237
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
Atomically perfect lines of bismuth (200 nm long or more) form in the Si(001) surface when a bismuth covered surface is annealed around the bismuth desorption temperature. We describe modeling results for the structure of these lines based on tight binding calculations, examine evidence for their extraordinary perfection, and describe the procedure used to fit the tight binding parametrization. The perfection of the lines is found to arise from a combination of thermodynamic and kinetic reasons.
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页码：7237 / 7242
页数：6
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