Ce- and Yb-based Kondo semiconductors

被引:144
作者
Takabatake, T [1 ]
Iga, F
Yoshino, T
Echizen, Y
Katoh, K
Kobayashi, K
Higa, M
Shimizu, N
Bando, Y
Nakamoto, G
Fujii, H
Izawa, K
Suzuki, T
Fujita, T
Sera, M
Hiroi, M
Maezawa, K
Mock, S
Von Lohneysen, H
Bruckl, A
Neumaier, K
Andres, K
机构
[1] Hiroshima Univ, Fac Sci, Dept Mat Sci, Higashihiroshima 739, Japan
[2] Hiroshima Univ, Fac Integrated Arts & Sci, Higashihiroshima 739, Japan
[3] Toyama Prefectural Univ, Fac Engn, Sendai, Miyagi 93903, Japan
[4] Univ Karlsruhe, Inst Phys, D-76128 Karlsruhe, Germany
[5] Walther Meissner Inst Tieftemp Forsch, D-85748 Garching, Germany
关键词
Kondo effect; electric resistivity; Hall effect; hybridization;
D O I
10.1016/S0304-8853(97)00842-1
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Kondo semiconductors are a class of strongly correlated f-electron materials whose low-energy excitations exhibit a (pseudo)gap at low temperatures. The significant difference between the pseudogap in orthorhombic CeNiSn and CeRhSb and the real gap in cubic Ce(3)Bi(4)Pt(3) and YbB(12) is highlighted by a comparison of transport properties. Low-temperature measurements of the magnetoresistance, Hall coefficient and specific heat of CeNiSn have revealed a field-induced excitation of the coherent low-carrier state. A systematic study of CeNi(1-x)T(x)Sn (T = Co, Cu and Pt) has shown that the residual carriers in CeNiSn are immobilized by 1% substitution irrespective of the substitutes. Further substitution with 5% Cu induces a magnetic instability at T = 0. (C) 1998 Elsevier Science B.V. All rights reserved.
引用
收藏
页码:277 / 282
页数:6
相关论文
共 45 条
  • [1] THERMODYNAMIC, TRANSPORT, AND EXCITATION PROPERTIES OF CE IMPURITIES IN A MODEL METAL - KONDO RESONANCE AND UNIVERSALITY IN THE MIXED-VALENT REGIME
    BICKERS, NE
    COX, DL
    WILKINS, JW
    [J]. PHYSICAL REVIEW LETTERS, 1985, 54 (03) : 230 - 233
  • [2] BRUCKL A, IN PRESS PHYSICA B
  • [3] KONDO COUPLING INDUCED CHARGE GAP IN CE3BI4PT3
    BUCHER, B
    SCHLESINGER, Z
    CANFIELD, PC
    FISK, Z
    [J]. PHYSICAL REVIEW LETTERS, 1994, 72 (04) : 522 - 525
  • [4] High pressures and the Kondo gap in Ce3Bi4Pt3
    Cooley, JC
    Aronson, MC
    Canfield, PC
    [J]. PHYSICAL REVIEW B, 1997, 55 (12) : 7533 - 7538
  • [5] Anisotropic magnetic-field-induced crossover from a pseudogap to a heavy-fermion state in CeNiSn
    Davydov, DN
    Kambe, S
    Jansen, AGM
    Wyder, P
    Wilson, N
    Lapertot, G
    Flouquet, J
    [J]. PHYSICAL REVIEW B, 1997, 55 (12) : R7299 - R7302
  • [6] TUNNELING EVIDENCE FOR THE QUASI-PARTICLE GAP IN KONDO SEMICONDUCTORS CENISN AND CERHSB
    EKINO, T
    TAKABATAKE, T
    TANAKA, H
    FUJII, H
    [J]. PHYSICAL REVIEW LETTERS, 1995, 75 (23) : 4262 - 4265
  • [7] Break-junction measurements of CeNiSn under magnetic fields
    Ekino, T
    Takabatake, T
    Fujii, H
    [J]. PHYSICA B, 1997, 230 : 635 - 637
  • [8] Kondo insulators
    Fisk, Z
    Sarrao, JL
    Cooper, SL
    Nyhus, P
    Boebinger, GS
    Passner, A
    Canfield, PC
    [J]. PHYSICA B-CONDENSED MATTER, 1996, 223-24 (1-4) : 409 - 412
  • [9] Grewe N., 1991, HDB PHYSICS CHEM RAR, P343
  • [10] TRANSPORT-PROPERTIES OF CENISN AT LOW-TEMPERATURES AND IN HIGH MAGNETIC-FIELDS
    HIESS, A
    GEIBEL, C
    SPARN, G
    BREDL, CD
    STEGLICH, F
    TAKABATAKE, T
    FUJII, H
    [J]. PHYSICA B, 1994, 199 : 437 - 439