Synthesis and optical properties of GaN/ZnO solid solution nanocrystals

被引：61

作者：

Han, Wei-Qiang ^{[1
]}

Liu, Zhenxian ^{[2
]}

Yu, Hua-Gen ^{[3
]}

机构：

[1] Brookhaven Natl Lab, Ctr Funct Nanomat, Upton, NY 11973 USA

[2] Carnegie Inst Washington, Geophys Lab, Washington, DC 20015 USA

[3] Brookhaven Natl Lab, Dept Chem, Upton, NY 11973 USA

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 18期

关键词：

gallium compounds; III-V semiconductors; II-VI semiconductors; nanostructured materials; nitridation; Raman spectra; solid solutions; surface hardening; transmission electron microscopy; ultraviolet spectra; visible spectra; wide band gap semiconductors; X-ray diffraction; zinc compounds; SOLUTION PHOTOCATALYST; RAMAN-SCATTERING; BAND-GAP; WATER;

D O I：

10.1063/1.3428393

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We devised a synthesis route to prepare narrow band gap GaN/ZnO solid solution nanocrystals via nitriding a homogeneous Ga-Zn-O nanoprecursor. The nanocrystals were characterized by several following methods: x-ray diffractometer, transmission electron microscopy, ultraviolet-visible diffuse reflection, and Raman spectroscopy. Here, we can control the composition of nanocrystals by the nitridation temperature. From 550 to 850 degrees C, the corresponding crystalline size varies from 6.1 to 27 nm. It has been demonstrated that the sample prepared at 650 degrees C had the narrowest band gap of 2.21 eV. Microstructural investigations show that the (101) surface is the predominantly exposed one for the GaN/ZnO solid solution nanocrystals. We also discuss the influence of chemical disorder based on the Raman spectra acquired. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3428393]

引用

页数：3

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