Prediction of bulk defects in CZ Si crystals using 3D unsteady calculations of melt convection

被引：26

作者：

Kalaev, VV

Lukanin, DP

Zabelin, VA

Makarov, YN

Virbulis, J

Dornberger, E

von Ammon, W

机构：

[1] Soft Impact Ltd, St Petersburg 194156, Russia

[2] STR GmbH, Erlangen, Germany

[3] Wacker Siltron AG, Burghausen, Germany

来源：

MATERIALS SCIENCE IN SEMICONDUCTOR PROCESSING | 2002年 / 5卷 / 4-5期

关键词：

silicon; Czochralski method; turbulent convection;

D O I：

10.1016/S1369-8001(02)00132-4

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We present 3D unsteady analysis of melt turbulent convection coupled with heat transfer in the crystal and crucible during CZ Si crystal growth. The 3D analysis includes the calculation of the crystallization front geometry, validated by comparing experimental data and results obtained with a conventional 2D model. At the second step, an analysis of defect incorporation and evolution in the crystal has been performed within a 2D model. (C) 2003 Elsevier Science Ltd. All rights reserved.

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收藏

页码：369 / 373

页数：5

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