Optical and dielectric properties of CuAl2O4 films synthesized by solid-phase epitaxy

被引:17
作者
Leu, L. C.
Norton, D. P.
Jellison, G. E., Jr.
Selvamanickam, V.
Xiong, X.
机构
[1] Univ Florida, Dept Mat Sci & Engn, Gainesville, FL 32611 USA
[2] Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA
[3] IGC Super Power LLC, Schenectady, NY 12304 USA
关键词
CuAl2O4; solid-phase epitaxy; spinel; dielectrics; oxide;
D O I
10.1016/j.tsf.2007.02.012
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The synthesis and properties of CuAl2O4 thin films have been examined. The CuAl2O4 films were deposited via reactive direct current magnetron sputter using a CuAl2 target. As-deposited films were amorphous. Post-deposition annealing at high temperature in oxygen yielded solid-phase epitaxy on MgO. The film orientation was cube-on-cube epitaxy on (001) MgO single-crystal substrates. The films were transparent to visible light. The band gap of crystalline CuAl2O4 was determined to be similar to 4 eV using a Tauc plot from the optical transmission spectrum. The dielectric constant of the amorphous films was determined to be similar to 20-23 at 1-100 kHz. (C) 2007 Elsevier B.V. All rights reserved.
引用
收藏
页码:6938 / 6942
页数:5
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