The design and fabrication of an optical fiber MEMS pressure sensor
被引:0
作者:
Ge, Yixian
论文数: 0引用数: 0
h-index: 0
机构:
Nanjing Normal Univ, Sch Phys Sci & Technol, Jiangsu Key Lab Optoelect Technol, Nanjing 210097, Peoples R ChinaNanjing Normal Univ, Sch Phys Sci & Technol, Jiangsu Key Lab Optoelect Technol, Nanjing 210097, Peoples R China
Ge, Yixian
[1
]
Wang, Ming
论文数: 0引用数: 0
h-index: 0
机构:
Nanjing Normal Univ, Sch Phys Sci & Technol, Jiangsu Key Lab Optoelect Technol, Nanjing 210097, Peoples R ChinaNanjing Normal Univ, Sch Phys Sci & Technol, Jiangsu Key Lab Optoelect Technol, Nanjing 210097, Peoples R China
Wang, Ming
[1
]
Rong, Hua
论文数: 0引用数: 0
h-index: 0
机构:
Nanjing Normal Univ, Sch Phys Sci & Technol, Jiangsu Key Lab Optoelect Technol, Nanjing 210097, Peoples R ChinaNanjing Normal Univ, Sch Phys Sci & Technol, Jiangsu Key Lab Optoelect Technol, Nanjing 210097, Peoples R China
Rong, Hua
[1
]
Chen, Xuxing
论文数: 0引用数: 0
h-index: 0
机构:
Nanjing Normal Univ, Sch Phys Sci & Technol, Jiangsu Key Lab Optoelect Technol, Nanjing 210097, Peoples R ChinaNanjing Normal Univ, Sch Phys Sci & Technol, Jiangsu Key Lab Optoelect Technol, Nanjing 210097, Peoples R China
Chen, Xuxing
[1
]
机构:
[1] Nanjing Normal Univ, Sch Phys Sci & Technol, Jiangsu Key Lab Optoelect Technol, Nanjing 210097, Peoples R China
来源:
FUNDAMENTAL PROBLEMS OF OPTOELECTRONICS AND MICROELECTRONICS III, PTS 1 AND 2
|
2007年
/
6595卷
基金:
中国国家自然科学基金;
关键词:
pressure sensor;
MEMS;
optical spectrum shift;
D O I:
10.1117/12.726498
中图分类号:
TM [电工技术];
TN [电子技术、通信技术];
学科分类号:
0808 ;
0809 ;
摘要:
A novel pressure sensor based on Fabry-Perot interferometry and micro-electromechanical system (MEMS) technology is proposed and demonstrated. Basic micro-electromechanical technique has been used to fabricate the pressure sensor. Fabrication process and packaging configuration are proposed. The loaded pressure is gauged by measuring the spectrum shift of the reflected optical signal. The experimental results show that high linear response in the range of 0.2-1.0 Mpa and a reasonable sensitivity of 10.07 nnvWa (spectrum shift/pressure) have been obtained for this sensor.