Luminescence, radiation damage, and color center creation in Eu3+-doped Bi4Ge3O12 fiber single crystals

被引:20
作者
Shim, JB
Yoshikawa, A
Bensalah, A
Fukuda, T
Solovieva, N
Nikl, M
Rosetta, E
Vedda, A
Yoon, DH
机构
[1] Tohoku Univ, Inst Multidisciplinary Res Adv Mat, Aoba Ku, Sendai, Miyagi 9808577, Japan
[2] Inst Phys AS CR, Prague 16253, Czech Republic
[3] Univ Milano Bicocca, INFM, I-20125 Milan, Italy
[4] Univ Milano Bicocca, Dept Mat Sci, I-20125 Milan, Italy
[5] Sungkyunkwan Univ, Dept Adv Mat Engn, Suwon 440746, South Korea
关键词
D O I
10.1063/1.1563816
中图分类号
O59 [应用物理学];
学科分类号
摘要
Doped Bi4Ge3O12 (BGO) fiber single crystals were grown by the micro-pulling-down method with the resistance heating system. Optical absorption measurements before and after x-ray irradiation (induced absorption) were performed in order to investigate the radiation damage of the crystals. The Eu3+-doped BGO has shown higher radiation resistance with respect to the equivalently grown undoped BGO fibers. Radio- and photoluminescence characteristics were obtained to clarify the role of Eu3+ in luminescence and scintillation mechanism. Radioluminescence spectra show the intense and slow (decay time of 1.61 ms) D-5(0,1)-F-7(x)(x=0-6) radiative transitions of Eu3+, while the intrinsic BGO emission becomes weaker with respect to the undoped BGO. Photoluminescence decay of the intrinsic BGO emission becomes nonexponential and noticeably faster in Eu-doped samples, which evidences the nonradiative energy transfer from intrinsic emission centers to Eu3+ ions. Thermally stimulated luminescence (TSL) measurements above room temperature prove that Eu3+ doping strongly influences the concentration of TSL active traps. (C) 2003 American Institute of Physics.
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页码:5131 / 5135
页数:5
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