Insulating gallium oxide layer produced by thermal oxidation of gallium-polar GaN

被引：11

作者：

Hossain, T. ^{[1
]}

Weil, D. ^{[1
]}

Nepal, N. ^{[2
]}

Garces, N. Y. ^{[2
]}

Hite, J. K. ^{[2
]}

Meyer, H. M., III ^{[3
]}

Eddy, C. R., Jr. ^{[2
]}

Baker, Troy ^{[4
]}

Mayo, Ashley ^{[4
]}

Schmitt, Jason ^{[4
]}

Edgar, J. H. ^{[1
]}

机构：

[1] Kansas State Univ, Dept Chem Engn, Manhattan, KS 66506 USA

[2] US Naval Res Lab, Elect Sci & Technol Div, Washington, DC 20375 USA

[3] Oak Ridge Natl Lab, Mat Sci & Technol Div, Oak Ridge, TN 37831 USA

[4] Nitride Solut, Wichita, KS 67213 USA

来源：

PHYSICA STATUS SOLIDI C: CURRENT TOPICS IN SOLID STATE PHYSICS, VOL 11, NO 3-4 | 2014年 / 11卷 / 3-4期

关键词：

GaN; thermal oxidation; gallium oxide; characterization; SEMICONDUCTOR; FILM;

D O I：

10.1002/pssc.201300659

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

The benefits of dry oxidation of n-GaN for the fabrication of metal-oxide-semiconductor structures are reported. GaN thin films grown on sapphire by MOCVD were thermally oxidized for 30, 45 and 60 minutes in a pure oxygen atmosphere at 850 degrees C to produce thin, smooth GaOx layers. The GaN sample oxidized for 30 minutes had the best properties. Its surface roughness (0.595 nm) as measured by atomic force microscopy (AFM) was the lowest. Capacitance-voltage measurements showed it had the best saturation in accumulation region and the sharpest transition from accumulation to depletion regions. Under gate voltage sweep, capacitance-voltage hysteresis was completely absent. The interface trap density was minimum (D-it = 2.75x10(10) cm(-2)eV(-1)) for sample oxidized for 30 mins. These results demonstrate a high quality GaOx layer is beneficial for GaN MOSFETs. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

引用

页码：565 / 568

页数：4

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