Let effects of ion beam irradiation on poly(di-n-hexylsilane)

被引：18
作者：
Seki, S
Kanzaki, K
Kunimi, Y
Tagawa, S
Yoshida, Y
Kudoh, H
Sugimoto, M
Sasuga, T
Seguchi, T
Shibata, H
机构：
[1] Osaka Univ, Inst Sci & Ind Res, Ibaraki, Osaka 567, Japan
[2] Japan Atom Energy Res Labs, Takasaki Radiat Chem Inst, Gunma 37012, Japan
[3] Univ Tokyo, Nucl Sci & Technol Res Ctr, Tokai, Ibaraki 31911, Japan
来源：
RADIATION PHYSICS AND CHEMISTRY | 1997年 / 50卷 / 05期
关键词：
D O I：
10.1016/S0969-806X(97)00063-7
中图分类号：
O64 [物理化学（理论化学）、化学物理学];
学科分类号：
070304 ; 081704 ;
摘要：
Thin films of poly(di-n-hexylsilane) were irradiated with 2-20 MeV H+, He+ and He2+ ion beams. The beams caused heterogeneous reactions of crosslinking and main chain scission in the films. The relative efficiency of the crosslinking was drastically changed in comparison with that of main chain scission. The anomalous change in the molecular weight distribution was analyzed with increasing irradiation flux, and the ion beam induced reaction radius; the track radius was determined for the radiation sources by the function of molecular weight dispersion. The values obtained ranged from 5.9 +/- 1.5 nm for 2 MeV He+ to 1.0 +/- 0.5 nm for and 20 MeV H+ ion beam irradiation. (C) 1997 Elsevier Science Ltd. All rights reserved.
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页码：423 / 427
页数：5
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