Nanowire Hydrogen Gas Sensor Employing CMOS Micro-hotplate

被引：5

作者：

Ali, S. Z. ^{[1
]}

Santra, S. ^{[1
]}

Haneef, I. ^{[1
]}

Schwandt, C. ^{[1
]}

Kumar, R. V. ^{[1
]}

Milne, W. I. ^{[1
]}

Udrea, F. ^{[1
]}

Guha, P. K. ^{[2
]}

Covington, J. A. ^{[2
]}

Gardner, J. W. ^{[2
]}

Garofalo, V. ^{[3
]}

机构：

[1] Univ Cambridge, Cambridge, England

[2] Univ Warwick, Coventry, W Midlands, England

[3] Univ Naples Federico II, Naples, Italy

来源：

2009 IEEE SENSORS, VOLS 1-3 | 2009年

基金：

英国工程与自然科学研究理事会;

关键词：

OPTIMIZATION; DESIGN;

D O I：

10.1109/ICSENS.2009.5398224

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper we present a novel hydrogen gas sensor comprising a high temperature SOI-MOS micro-hotplate and employing zinc oxide nanowires as the sensing material. The micro-hotplates were fabricated at a commercial SOI foundry followed by a backside deep reactive ion etch (DRIE) at a commercial MEMS foundry. Particular care was taken in designing the heater shape using a systematic parametric approach to achieve excellent temperature uniformity (within 1-2%) as shown by both simulations and experimental infra-red imaging results. Zinc oxide nanowires were grown on these devices and show promising responses to hydrogen with a response (R-a/R-h) of 50 at 100 ppm in argon. The devices possess a low D.C. power consumption of only 16 mW at 300 degrees C and, being CMOS compatible, offer low unit cost in high volumes and full circuit integration. We believe that these devices have potential for application as a sub-$1 hydrogen sensor with sub-1mW (pulsed mode) power consumption.

引用

页码：114 / +

页数：2

共 14 条

[1] Tungsten-Based SOI Microhotplates for Smart Gas Sensors [J].