Large Photoresponse in Amorphous In-Ga-Zn-O and Origin of Reversible and Slow Decay

被引：65

作者：

Lee, Dong Hee ^{[1
]}

Kawamura, Ken-ichi ^{[2
]}

Nomura, Kenji ^{[2
]}

Kamiya, Toshio ^{[1
]}

Hosono, Hideo ^{[1
,2
]}

机构：

[1] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 2268503, Japan

[2] Tokyo Inst Technol, Frontier Res Ctr, Midori Ku, Yokohama, Kanagawa 2268503, Japan

来源：

ELECTROCHEMICAL AND SOLID STATE LETTERS | 2010年 / 13卷 / 09期

关键词：

OXIDE SEMICONDUCTOR A-INGAZNO4-X; ELECTRONIC-STRUCTURE; PHOTOCONDUCTIVITY; DENSITY; PAPER; TRAP;

D O I：

10.1149/1.3460302

中图分类号：

O646 [电化学、电解、磁化学];

学科分类号：

081704 ;

摘要：

Photoresponses of an amorphous oxide semiconductor, In-Ga-Zn-O (a-IGZO), are investigated by continuous-wave photocurrent measurements, which are discussed in terms of mobility-lifetime products (eta mu tau). It shows that a-IGZO has eta mu tau values larger than those of amorphous silicon, which originate from high Fermi levels as well as long photocarrier lifetime. Reversible and very slow photocurrent decays are observed with time constants > 10(3) s and associated activation energies similar to 0.9 eV. A metastable donor model and a photoreduction model are proposed to explain it. These results provide fundamental physical data for optoelectronic applications of a-IGZO. (C) 2010 The Electrochemical Society. [DOI: 10.1149/1.3460302] All rights reserved.

引用

页码：II324 / II327

页数：4

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