Electronic structure of ultrathin γ′-Fe4N (100) films epitaxially grown on Cu(100)

被引:32
作者
Navio, Cristina [1 ]
Alvarez, Jesus
Capitan, Maria Jose
Ecija, David
Gallego, Jose Maria
Yndurain, Felix
Miranda, Rodolfo
机构
[1] Univ Autonoma Madrid, Dept Fis Mat Condensada, E-28049 Madrid, Spain
[2] Univ Autonoma Madrid, Inst Nicolas Cabrera, E-28049 Madrid, Spain
[3] CSIC, Inst Estructura Mat, E-28006 Madrid, Spain
[4] CSIC, Inst Ciencia Mat, E-28049 Madrid, Spain
来源
PHYSICAL REVIEW B | 2007年 / 75卷 / 12期
关键词
D O I
10.1103/PhysRevB.75.125422
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
The electronic structure of ultrathin films of gamma(')-Fe4N(100) deposited on Cu(100) has been characterized by a combination of photoelectron spectroscopies, scanning tunneling microscopy, and diffraction techniques. The comparison of the data with first-principles simulations sheds light on magnetic moments, type of bonding, and charge transfer. N atoms residing in the bulk or at the surface are found to be distinguishable. The gamma(')-Fe4N(100) surface is laterally heterogeneous and contains both areas reconstructed with a p4gm(2x2) symmetry and bulklike terminated. The densities of states of the reconstructed and unreconstructed areas of the surface are obtained and compared with the experiment. Comparison with c(2x2)N/Fe(100) provides spectroscopic evidence that a subsurface excess of N drives the p4gm(2x2) reconstruction.
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页数:7
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