Doping of AlxGa1-xN

被引：155

作者：

Stampfl, C ^{[1
]}

Van de Walle, CG ^{[1
]}

机构：

[1] Xerox Corp, Palo Alto Res Ctr, Palo Alto, CA 94304 USA

来源：

APPLIED PHYSICS LETTERS | 1998年 / 72卷 / 04期

关键词：

D O I：

10.1063/1.120803

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

N-type AlxGa1-xN exhibits a dramatic decrease in the free-carrier concentration for x greater than or equal to 0.40. Based on first-principles calculations, we propose that two effects are responsible for this behavior: (i) in the case of-doping with oxygen (the most common unintentional donor), a DX transition occurs, which converts the shallow donor into-a deep level; and (ii) compensation by the cation vacancy (V-Ga or V-Al), a triple acceptor,increases with alloy composition x. For p-type doping, the calculations indicate that the doping efficiency decreases due to compensation by the nitrogen vacancy. In addition, an increase in the acceptor ionization energy is found with increasing x.

引用

页码：459 / 461

页数：3

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