Characterization of low temperature transport properties in InP/InGaAs double heterojunction bipolar transistors

被引：2
|
作者：
Wang, H [1 ]
Ng, GI [1 ]
机构：
[1] Nanyang Technol Univ, Sch Elect & Elect Engn, Ctr Microelect, Singapore 639798, Singapore
来源：
2000 INTERNATIONAL CONFERENCE ON INDIUM PHOSPHIDE AND RELATED MATERIALS, CONFERENCE PROCEEDINGS | 2000年
关键词：
D O I：
10.1109/ICIPRM.2000.850251
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
Low temperature transport properties of InP/LnGaAs double heterojunction bipolar transistors (DHBTs) have been carefully investigated. The mechanisms for the devices operating in different temperature range have been clearly identified. The base current in the temperature range of 240 to 300 K is dominated by electron-hole band-to-band recombination and trap related recombination. In the temperature range of 77K to 240K, trap related recombination mechanism plays a important role in determining the base current. For temperature lower than 77 K, both collector and base currents are found to be limited by the electron tunneling through the barrier formed by conduction-band discontinuity at E-B junction.
引用
收藏
页码：138 / 141
页数：4
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