The characteristic carrier-Er interaction distance in Er-doped a-Si/SiO2 superlattices formed by ion sputtering

被引：63
作者：
Jhe, JH
Shin, JH
Kim, KJ
Moon, DW
机构：
[1] Korea Adv Inst Sci & Technol, Dept Phys, Taejon, South Korea
[2] KRISS, Nano Surface Grp, Taejon 305606, South Korea
来源：
APPLIED PHYSICS LETTERS | 2003年 / 82卷 / 25期
关键词：
D O I：
10.1063/1.1586458
中图分类号：
O59 [应用物理学];
学科分类号：
摘要：
The characteristic interaction distance between Er3+ ions and carriers that excite them in Er-doped a-Si/SiO2 superlattices is investigated. Superlattice thin films consisting of 12 periods of a-Si/SiO2:Er/SiO2/SiO2:Er layers were deposited by ion sputtering and subsequent annealing at 950 degreesC. The dependence of the Er3+ photoluminescence intensity on the thickness of the Er-doped SiO2 layers is well-described by an exponentially decreasing Er-carrier interaction with a characteristic interaction distance of 0.5+/-0.1 nm. (C) 2003 American Institute of Physics.
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页码：4489 / 4491
页数：3
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