The influence of SiOx and SiNx passivation on the negative bias stability of Hf-In-Zn-O thin film transistors under illumination

被引：60

作者：

Park, Joon Seok ^{[1
]}

Kim, Tae Sang ^{[1
]}

Son, Kyoung Seok ^{[1
]}

Lee, Kwang-Hee ^{[1
]}

Maeng, Wan-Joo ^{[1
]}

Kim, Hyun-Suk ^{[1
]}

Kim, Eok Su ^{[1
]}

Park, Kyung-Bae ^{[1
]}

Seon, Jong-Baek ^{[1
]}

Choi, Woong ^{[1
]}

Ryu, Myung Kwan ^{[1
]}

Lee, Sang Yoon ^{[1
]}

机构：

[1] Samsung Adv Inst Technol, Display Lab, Yongin 446712, Gyeonggi Do, South Korea

来源：

APPLIED PHYSICS LETTERS | 2010年 / 96卷 / 26期

关键词：

hafnium compounds; indium compounds; lighting; passivation; semiconductor growth; thin film transistors; zinc compounds; OXIDE-SEMICONDUCTOR CAPACITORS; ZINC-OXIDE; ROOM-TEMPERATURE; HYDROGEN; GENERATION; INTERFACE;

D O I：

10.1063/1.3435482

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

The stability of hafnium indium zinc oxide thin film transistors under negative bias stress with simultaneous exposure to white light was evaluated. Two different inverted staggered bottom gate devices, each with a silicon oxide and a silicon nitride passivation, were compared. The latter exhibits higher field effect mobility but inferior subthreshold swing, and undergoes more severe shifts in threshold voltage (V-T) during negative bias illumination stress. The time evolution of V-T fits the stretched exponential equation, which implies that hydrogen incorporation during the nitride growth has generated bulk defects within the semiconductor and/or at the semiconductor/gate dielectric interface. (C) 2010 American Institute of Physics. [doi:10.1063/1.3435482]

引用

页数：3

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