Effect of ZnO loading on the electrical characteristics of graphene oxide-ZnO based thin film transistors

Reduced graphene oxide based composites filled with metal oxide nanoparticles are emerging as active materials in transistor applications. Here we report fabrication of transistors on poly methyl methacrylate (PMMA) dielectric using graphene oxide-ZnO nanocomposite as channel layer with 5 wt% ZnO nanorods were loaded in graphene oxide. The transistors showed ambipolar conductivity with the value of hole and electron mobility as 0.74 and 0.67 cm(2)/V.s, respectively, on PMMA dielectric. This indicates that percolation threshold could not be achieved with 5% ZnO though the low concentration of ZnO reduces the GO partially and the n-type conductivity slightly increases compared to the thermally or chemically reduced GO based TFTs.