Noise margins of threshold logic gates containing resonant tunneling diodes

被引：5

作者：

Bhattacharya, M ^{[1
]}

Mazumder, P ^{[1
]}

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

来源：

IEEE TRANSACTIONS ON CIRCUITS AND SYSTEMS II-EXPRESS BRIEFS | 2000年 / 47卷 / 10期

基金：

美国国家科学基金会;

关键词：

emerging technologies; noise margins; resonant tunneling diode; threshold logic;

D O I：

10.1109/82.877149

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Threshold gates consisting of resonant tunneling diodes (RTDs) in conjunction with HBTs or CHFETs or MOSFETs can form extremely compact, ultrafast, digital logic alternatives, and may be used for digital signal processing applications in the near future. The resonant tunneling phenomenon causes these circuits to exhibit super-high-speed switching capabilities, Additionally, by virtue of being threshold logic gates, they are guaranteed to be more compact than traditional digital logic circuits, while achieving the same functionality. However, reliable logic design with these gates will need a thorough understanding of their noise performance and power dissipation among other things. In this brief, we present an analytical study of the noise performance of these threshold gates supplemented by computer simulation results, with the objective of obtaining reliable circuit design guidelines.

引用

页码：1080 / 1085

页数：6

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