A 200mW D-band Power Amplifier with 17.8% PAE in 250-nm InP HBT Technology

被引：46

作者：

Ahmed, Ahmed S. H. ^{[1
]}

Seo, Munkyo ^{[2
]}

Farid, Ali A. ^{[1
]}

Urteaga, Miguel ^{[3
]}

Buckwalter, James F. ^{[1
]}

Rodwell, Mark J. W. ^{[1
]}

机构：

[1] Univ Calif Santa Barbara, Dept Elect & Comp Engn, Santa Barbara, CA 93106 USA

[2] Sungkyunkwan Univ, Dept Elect & Comp Engn, Seoul, South Korea

[3] Teledyne Sci Co, Thousand Oaks, CA 91360 USA

来源：

2020 15TH EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE (EUMIC) | 2021年

关键词：

D-band; millimeter wave; high efficiency; power amplifiers; 250-nm InP; low loss; compact; transmission-line combiner; corporate combiner;

D O I：

10.1109/EuMIC48047.2021.00012

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

We report a compact and high efficiency D-band power amplifier in 250nm InP HBT technology. A compact and low loss 8:1 transmission line power combiner is demonstrated. The three-stage power amplifier combines 8 capacitively linearized common-base power cells. The amplifier has 23dBm peak power with 17.8% power added efficiency (PAE) and 16.5dB associated large-signal gain at 131GHz. At 131GHz, the smallsignal gain is 21.9dB. The small-signal 3dB-bandwidth is 125.8-145.8GHz. Over the 127-151GHz bandwidth, the saturated output power is greater than 22.3dBm with greater than 15% associated PAE. The amplifier occupies 1.34mm(2) die area and consumes 1.1W DC power. To the authors' knowledge, this result demonstrates a record PAE.

引用

页码：1 / 4

页数：4

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