The Seebeck coefficient and phonon drag in silicon

被引：48

作者：

Mahan, G. D. ^{[1
]}

Lindsay, L. ^{[2
]}

Broido, D. A. ^{[3
]}

机构：

[1] Penn State Univ, Dept Phys, University Pk, PA 16802 USA

[2] Oak Ridge Natl Lab, Div Mat Sci & Technol, Oak Ridge, TN 37831 USA

[3] Boston Coll, Dept Phys, Chestnut Hill, MA 02467 USA

来源：

JOURNAL OF APPLIED PHYSICS | 2014年 / 116卷 / 24期

关键词：

THERMOELECTRIC-POWER; ELECTRON-MOBILITY; SCATTERING MOBILITY; IMPURITY;

D O I：

10.1063/1.4904925

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

We present a theory of the phonon-drag Seebeck coefficient in nondegenerate semiconductors, and apply it to silicon for temperatures 30< T< 300 K. Our calculation uses only parameters from the literature, and previous calculations of the phonon lifetime. We find excellent agreement with the measurements of Geballe and Hull [Phys. Rev. 98, 940 ( 1955)]. The phonon-drag term dominates at low temperature, and shows an important dependence on the dimensions of the experimental sample. (C) 2014 AIP Publishing LLC.

引用

页数：7

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