Plasticity of misoriented (001) GaAs surface

被引：4
|
作者：
Patriarche, G
Le Bourhis, E
机构：
[1] CNRS, UPR 20, Lab Photon & Nanostruct, F-91460 Marcoussis, France
[2] Univ Poitiers, CNRS, UMR 6630, Met Phys Lab, F-86962 Futuroscope, France
来源：
JOURNAL OF MATERIALS SCIENCE LETTERS | 2003年 / 22卷 / 07期
关键词：
D O I：
10.1023/A:1022911125088
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The plastic behavior of a (001) GaAs surface and a vicinal (001) GaAs surface (4° misoriented) was investigated using nonindentation as well as TEM. The presence of steps along the [¯110] at the vicinal surface did not change significantly the loading-unloading curves. In fact, popins were detected in both 4° and 0° samples and the hardness was found to be very similar in both samples. Furthermore, perfect dislocation arrangements were found to be very similar in the 4° and 0° samples while partial dislocation generation seemed to be enhanced in the 4° sample.
引用
收藏
页码：565 / 567
页数：3
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