Growth and characterization of silicon carbide nanowires

被引：29

作者：

Park, BT ^{[1
]}

Ryu, YW ^{[1
]}

Yong, KJ ^{[1
]}

机构：

[1] Pohang Univ Sci & Technol, POSTECH, Surface Chem Lab Elect Mat, Dept Chem Engn, Pohang 790784, South Korea

来源：

SURFACE REVIEW AND LETTERS | 2004年 / 11卷 / 4-5期

关键词：

low dimensional structures; nanowires; growth models; SiC;

D O I：

10.1142/S0218625X04006311

中图分类号：

O64 [物理化学（理论化学）、化学物理学];

学科分类号：

070304 ; 081704 ;

摘要：

A simple, direct synthesis method was used to grow the core-shell SiC-SiOx nanowires by heating the NiO catalyzed silicon substrate. The carbothermal reduction of WO3 by C provided a reductive environment to synthesize the crystalline SiC nanowires covered with the SiOx sheath in the growth temperature of 1000-1100degreesC. After hydrofluoric acid (HF) etching, the cubic beta-SiC nanowires were extracted from the core-shell nanowires in large quantities. A solid-liquid-solid (SLS) mechanism was proposed for the growth of the core-shell SiC-SiOx nanowires.

引用

页码：373 / 378

页数：6

共 50 条

[1] Growth of silicon carbide nanowires on porous silicon carbide ceramics by a carbothermal reduction process
Lee, Jin-Seok
Choi, Do-Mun
Kim, Chang-Bum
Lee, Sang-Hoon
Choi, Sung-Churl
JOURNAL OF CERAMIC PROCESSING RESEARCH, 2007, 8 (02): : 87 - 90
[2] Improvement of porous silicon carbide filters by growth of silicon carbide nanowires using a modified carbothermal reduction process
Lee, Jin-Seok
Lee, Sea-Hoon
Choi, Sung-Churl
JOURNAL OF ALLOYS AND COMPOUNDS, 2009, 467 (1-2) : 543 - 549
[3] Spontaneous formation and characterization of silicon carbide nanowires produced via thermolysis
Soszynski, Michal
Dabrowska, Agnieszka
Huczko, Andrzej
PHYSICA STATUS SOLIDI B-BASIC SOLID STATE PHYSICS, 2011, 248 (11): : 2708 - 2711
[4] Scanning tunneling microscopy investigations of silicon carbide nanowires
Busiakiewicz, A.
Klusek, Z.
Huczko, A.
Kowalczyk, P. J.
Dabrowski, P.
Kozlowski, W.
Cudzilo, S.
Datta, P. K.
Olejniczak, W.
APPLIED SURFACE SCIENCE, 2008, 254 (14) : 4268 - 4272
[5] Silicon carbide nanowires studied by scanning tunneling spectroscopy
Busiakiewicz, A.
Klusek, Z.
Kowalczyk, P. J.
Huczko, A.
Cudzilo, S.
Datta, P. K.
Olejniczak, W.
SURFACE SCIENCE, 2008, 602 (01) : 316 - 320
[6] Synthesis and investigation of silicon carbide nanowires by HFCVD method
Mortazavi, S. H.
Ghoranneviss, M.
Dadashbaba, M.
Alipour, R.
BULLETIN OF MATERIALS SCIENCE, 2016, 39 (04) : 953 - 960
[7] Electronic Band Structure of Cubic Silicon Carbide Nanowires
Miranda, A.
Ramos, A. E.
Cruz-Irisson, M.
SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 : 575 - +
[8] A comprehensive study of thermoelectric and transport properties of β-silicon carbide nanowires
Fonseca, L.F. (luis.fonseca@upr.edu), 1600, American Institute of Physics Inc. (114):
[9] Low Voltage Nanoelectromechanical Switches Based on Silicon Carbide Nanowires
Feng, X. L.
Matheny, M. H.
Zorman, C. A.
Mehregany, M.
Roukes, M. L.
NANO LETTERS, 2010, 10 (08) : 2891 - 2896
[10] Effects of Morphology on the Electronic Properties of Hydrogenated Silicon Carbide Nanowires
Miranda, A.
Cuevas, J. L.
Ramos, A. E.
Cruz-Irisson, M.
JOURNAL OF NANO RESEARCH, 2009, 5 : 161 - 167

← 1 2 3 4 5 →