Effect of a silicon nitride buffer layer on the electrical properties of tantalum pentoxide films

被引：4

作者：

Wang, B. Y. ^{[1
]}

Wang, Hao ^{[1
]}

Ye, C. ^{[1
]}

Wang, Y. ^{[1
]}

Ye, Y. ^{[1
]}

Wang, W. F. ^{[1
]}

机构：

[1] Hubei Univ, Fac Phys & Elect Technol, Wuhan 430062, Peoples R China

来源：

MICROELECTRONIC ENGINEERING | 2010年 / 87卷 / 04期

关键词：

Buffer layer; Reactive sputtering; Dielectric constant; Conduction mechanisms; CONDUCTION MECHANISMS; LEAKAGE CURRENTS; TA2O5; FILMS; OXIDE;

D O I：

10.1016/j.mee.2009.08.020

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Ta2O5 films with a buffer layer of silicon nitride of various thicknesses were deposited on Si substrate by reactive sputtering and submitted to annealing at 700 degrees C in nitrogen atmosphere. The microstructure and the electrical properties of thin films were studied. It was found that with a buffer layer of silicon nitride the electrical properties of SixNy/Ta2O5 film can be improved than Ta2O5 film. When the thickness of the buffer layer was 3 nm, the SixNy/Ta2O5 film has the highest dielectric constant of 27.4 and the lowest leakage current density of 4.61 x 10(-5) A/cm(2) (at -1 V). For the SixNy (3 nm)/Ta2O5 film, the conduction mechanism of leakage Current was also analyzed and showed four types of conduction mechanisms at different applied voltages. (C) 2009 Elsevier B.V. All rights reserved.

引用

页码：597 / 600

页数：4

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