Displacement damage-induced catastrophic second breakdown in silicon carbide Schottky power diodes

被引：37

作者：

Scheick, L ^{[1
]}

Selva, L ^{[1
]}

Becker, H ^{[1
]}

机构：

[1] CALTECH, Jet Prop Lab, Pasadena, CA 91109 USA

来源：

IEEE TRANSACTIONS ON NUCLEAR SCIENCE | 2004年 / 51卷 / 06期

关键词：

avalanche breakdown; displacement damage; proton radiation; Schottky diode; second breakdown; silicon carbide; thermal breakdown;

D O I：

10.1109/TNS.2004.839195

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A novel catastrophic breakdown mode in reverse biased silicon carbide diodes has been seen for particles that are too low in LET to induce SEB, however SEB-like events were seen from particles of higher LET. The low LET breakdown mechanism correlates with second breakdown in diodes due to increased leakage and assisted charge injection from incident particles. Percolation theory was used to predict some basic responses of the devices.

引用

收藏

页码：3193 / 3200

页数：8

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