Bias dependent physics-based model of low-frequency noise for nanowire type gate-all-around MOSFETs

被引：0

作者：

Yi, Boram ^{[1
]}

Yang, Geun Soo ^{[2
]}

Barraud, Sylvain ^{[3
]}

Bervard, Laurent ^{[3
]}

Lee, Jae Woo ^{[4
]}

Yang, Ji-Woon ^{[4
]}

机构：

[1] Samsung Co, Design Enablement Team, Hwaseong, South Korea

[2] Samsung Co, Semicond R&D Ctr, Hwaseong, South Korea

[3] Univ Grenoble Alpes, CEA LETI, Minatec Campus, Grenoble, France

[4] Korea Univ, Dept Elect & Informat Engn, Sejong, South Korea

来源：

SOLID-STATE ELECTRONICS | 2022年 / 189卷

关键词：

Compact model; Gate-all-around MOSFETs; Low-frequency noise; Nanowire MOSFETs; 1/F NOISE;

D O I：

10.1016/j.sse.2021.108223

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this study, the bias dependence of low-frequency noise (LFN) in nanowire type gate-all-around (GAA) MOSFETs was physically modeled. In the model, the inversion carrier density distribution was considered based on the potential in the channel that changes according to the bias. The developed model was verified with measurement data of the fabricated device. The model could help circuit designers to optimize noise performance in analog/RF applications when designing integrated circuits using nanowire-type GAA MOSFETs.

引用

页数：4

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