Bias dependent physics-based model of low-frequency noise for nanowire type gate-all-around MOSFETs

被引：0
|
作者：
Yi, Boram [1 ]
Yang, Geun Soo [2 ]
Barraud, Sylvain [3 ]
Bervard, Laurent [3 ]
Lee, Jae Woo [4 ]
Yang, Ji-Woon [4 ]
机构：
[1] Samsung Co, Design Enablement Team, Hwaseong, South Korea
[2] Samsung Co, Semicond R&D Ctr, Hwaseong, South Korea
[3] Univ Grenoble Alpes, CEA LETI, Minatec Campus, Grenoble, France
[4] Korea Univ, Dept Elect & Informat Engn, Sejong, South Korea
来源：
SOLID-STATE ELECTRONICS | 2022年 / 189卷
关键词：
Compact model; Gate-all-around MOSFETs; Low-frequency noise; Nanowire MOSFETs; 1/F NOISE;
D O I：
10.1016/j.sse.2021.108223
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
In this study, the bias dependence of low-frequency noise (LFN) in nanowire type gate-all-around (GAA) MOSFETs was physically modeled. In the model, the inversion carrier density distribution was considered based on the potential in the channel that changes according to the bias. The developed model was verified with measurement data of the fabricated device. The model could help circuit designers to optimize noise performance in analog/RF applications when designing integrated circuits using nanowire-type GAA MOSFETs.
引用
收藏
页数：4
相关论文
共 50 条
  • [31] Bias dependent variability of low-frequency noise in single-layer graphene FETs
    Mavredakis, Nikolaos
    Garcia Cortadella, Ramon
    Illa, Xavi
    Schaefer, Nathan
    Bonaccini Calia, Andrea
    Anton-Guimera-Brunet
    Garrido, Jose A.
    Jimenez, David
    NANOSCALE ADVANCES, 2020, 2 (11): : 5450 - 5460
  • [32] Gate electrode effects on low-frequency (1/f) noise in p-MOSFETs with high-κ dielectrics
    Srinivasan, P.
    Simoen, E.
    Singanamalla, R.
    Yu, H. Y.
    Claeys, C.
    Misra, D.
    SOLID-STATE ELECTRONICS, 2006, 50 (06) : 992 - 998
  • [33] Effect of self-heating on small-signal parameters of In0.53Ga0.47As based gate-all-around MOSFETs
    Srinivas, P. S. T. N.
    Kumar, Arun
    Tiwari, Pramod Kumar
    SEMICONDUCTOR SCIENCE AND TECHNOLOGY, 2021, 36 (12)
  • [34] A low-frequency noise model for four-gate field-effect transistors
    Jimenez Tejada, Juan Antonio
    Rodriguez, Abraham Luque
    Godoy, Andres
    Villanueva, Juan A. Lopez
    Gomez-Campos, Francisco M.
    Rodriguez-Bolivar, Salvador
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2008, 55 (03) : 896 - 903
  • [35] Comparative study of drain and gate low-frequency noise in nMOSFETs with hafnium-based gate dielectrics
    Giusi, G
    Crupi, F
    Pace, C
    Ciofi, C
    Groeseneken, G
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2006, 53 (04) : 823 - 828
  • [36] Low frequency noise variability in ultra scaled FD-SOI n-MOSFETs: Dependence on gate bias, frequency and temperature
    Theodorou, C. G.
    Ioannidis, E. G.
    Haendler, S.
    Josse, E.
    Dimitriadis, C. A.
    Ghibaudo, G.
    SOLID-STATE ELECTRONICS, 2016, 117 : 88 - 93
  • [37] Slow oxide trap density profile extraction using gate current low-frequency noise in ultrathin oxide MOSFETs
    Armand, J.
    Martinez, F.
    Valenza, M.
    Rochereau, K.
    Vincent, E.
    MICROELECTRONIC ENGINEERING, 2007, 84 (9-10) : 2382 - 2385
  • [38] Temperature-Dependent Low-Frequency Noise Analysis of ZnO Nanowire Field-Effect Transistors
    Xue, Hao
    Shao, Ye
    Yoon, Jongwon
    Lee, Takhee
    Lu, Wu
    IEEE TRANSACTIONS ON ELECTRON DEVICES, 2021, 68 (07) : 3532 - 3536
  • [39] Assessment of Technological Device Parameters by Low-frequency Noise Investigation in SOI Omega-gate Nanowire NMOS FETs
    Koyama, M.
    Casse, M.
    Barraud, S.
    Ghibaudo, G.
    Iwai, H.
    Reimbold, G.
    2014 15TH INTERNATIONAL CONFERENCE ON ULTIMATE INTEGRATION ON SILICON (ULIS), 2014, : 57 - 60
  • [40] Gate-bias dependence of low-frequency noise in poly-Si thin-film transistors
    Han, IK
    Lee, JI
    Lee, MB
    Chang, SK
    Kim, EK
    JOURNAL OF THE KOREAN PHYSICAL SOCIETY, 2004, 45 : S949 - S954
12345