Effects of gamma-ray irradiation on polycrystalline silicon thin-film transistors

被引：17

作者：

Hastas, NA

Dimitriadis, CA ^{[1
]}

Brini, J

Kamarinos, G

Gueorguiev, VK

Kaschieva, S

机构：

[1] Univ Thessaloniki, Dept Phys, Thessaloniki 54124, Greece

[2] ENSERG, LPCS, F-38016 Grenoble 1, France

[3] Bulgarian Acad Sci, Inst Solid State Phys, Sofia, Bulgaria

来源：

MICROELECTRONICS RELIABILITY | 2003年 / 43卷 / 01期

关键词：

D O I：

10.1016/S0026-2714(02)00119-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The effects of gamma-ray irradiation on the performance of polycrystalline silicon thin-film transistors are investigated. After irradiation, the threshold voltage of the TFTs is shifted negatively and well-defined kinks are formed in the subthreshold regions of the transfer characteristics, explained by the turn-on of back channel and sidewall leakage current paths. In the non-irradiated device, the leakage current I-L is controlled by the reverse biased drain junction, while after irradiation IL is limited by the intrinsic resistance of the polysilicon material itself. (C) 2002 Elsevier Science Ltd. All rights reserved.

引用

收藏

页码：57 / 60

页数：4

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