Multiphonon resonant Raman scattering in N-doped ZnO

被引：62
作者：
Zhu, Xiaming
Wu, Huizhen [1 ]
Yuan, Zijian
Kong, Jinfang [2 ]
Shen, Wenzhong [2 ]
机构：
[1] Zhejiang Univ, Dept Phys, State Key Lab Modern Opt Instrumentat, Hangzhou 310027, Peoples R China
[2] Shanghai Jiao Tong Univ, Dept Phys, Shanghai 200030, Peoples R China
来源：
JOURNAL OF RAMAN SPECTROSCOPY | 2009年 / 40卷 / 12期
关键词：
resonant Raman scattering; LO phonon; ZnO; N doping; LO PHONONS; CDS; SEMICONDUCTORS; CRYSTALS; EPITAXY; FILMS; LIGHT;
D O I：
10.1002/jrs.2385
中图分类号：
O433 [光谱学];
学科分类号：
0703 ; 070302 ;
摘要：
Multiphonon resonant Raman scattering in N-doped ZnO films was studied, and an enhancement of the resonant Raman scattering process as well as longitudinal optical (LO) phonon overtones up to the sixth order were observed at room temperature. The resonant Raman scattering intensity of the 1LO phonon in N-doped ZnO appears three times as strong as that of undoped ZnO, which mainly arises from the defect-induced Raman scattering caused by N-doping. The nature of the 1LO phonon at 578 cm(-1) is interpreted as a quasimode with mixed A(1) and E-1 symmetry because of the defects formed in the ZnO lattice. In addition, the previously neglected impurity-induced two-LO-phonon scattering process was clearly observed in N-doped ZnO. Copyright (C) 2009 John Wiley & Sons, Ltd.
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收藏
页码：2155 / 2161
页数：7
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