Electrical characterization of TiSi/Si1-x-yGexCy Schottky diodes

被引：6

作者：

Saha, AR

Chattopadhyay, S ^{[1
]}

Maiti, CK

机构：

[1] Newcastle Univ, Sch Elect Elect & Comp Engn, Newcastle Upon Tyne NE1 7RU, Tyne & Wear, England

[2] Indian Inst Technol, Dept Elect, Kharagpur 721302, W Bengal, India

[3] Indian Inst Technol, ECE, Kharagpur 721302, W Bengal, India

来源：

MATERIALS SCIENCE AND ENGINEERING B-SOLID STATE MATERIALS FOR ADVANCED TECHNOLOGY | 2004年 / 114卷

关键词：

Schottky diodes; RBS; Si-cap layer; barrier height;

D O I：

10.1016/j.mseb.2004.07.016

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

TiSi/Si1-x-yGexCy Schottky diodes have been fabricated on both Si1-x-yGexCy layers with and without a Si-cap layer and Rutherford backscattering spectroscopy (RBS) was used to verify the thickness and composition of the silicide phases. The forward- and reverse-current voltage (I-V) characteristics for the diodes were measured in the temperature range of 100-300 K to determine the Schottky barrier height (phi(b)) and ideality factor (n). It has been found that the ideality factor decreases with an increase in temperature while the barrier height increases. The effect of the Si-cap layer on electrical characteristics of the Si1-x-yGexCy Schottky diodes is also studied. Results are compared with a similar TiSi/Si Schottky diode processed in the same run. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：218 / 222

页数：5

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