Deposition of sacrificial silicon oxide layers by electron cyclotron resonance plasma

被引：4

作者：

Biasotto, C. ^{[1
]}

Daltrini, A. M. ^{[1
]}

Teixeira, R. C. ^{[1
]}

Boscoli, F. A. ^{[1
]}

Diniz, J. A. ^{[1
]}

Moshkalev, S. A. ^{[1
]}

Doi, I. ^{[1
]}

机构：

[1] Univ Estadual Campinas, Ctr Semicond Components, BR-13083970 Campinas, SP, Brazil

来源：

JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B | 2007年 / 25卷 / 04期

基金：

巴西圣保罗研究基金会;

关键词：

D O I：

10.1116/1.2746331

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Electron cyclotron resonance plasmas with SiH4/O-2/Ar mixtures were used for deposition of thin films of silicon oxide, to be employed as sacrificial layers in microelectromechanical system (MEMS) fabrication. The grown films were characterized by Fourier transform infrared and ellipsometry. Optical emission spectroscopy and Langmuir probe were used for plasma characterization. It has been shown that OH molecules generated in the plasma play an important role in formation of films suitable as sacrificial layers for MEMS fabrication. Extremely high etch rates of grown oxide films (up to 10 mu m/min) were obtained, allowing fabrication of high quality poly-Si suspended structures. (c) 2007 American Vacuum Society.

引用

页码：1166 / 1170

页数：5

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