Millimeter-Wave Front-End Components in Metamorphic HEMT Technology

被引：2
|
作者：
Schlechtweg, M. [1 ]
Kallfass, I. [1 ]
Tessmann, A. [1 ]
Schwoerer, C. [2 ]
Leuther, A. [1 ]
机构：
[1] Fraunhofer Inst Appl Solid State Phys, Tullastr 72, D-79108 Freiburg, Germany
[2] Siemens VDO Automot AG, D-88131 Lindau, Germany
来源：
2006 EUROPEAN MICROWAVE INTEGRATED CIRCUITS CONFERENCE | 2006年
关键词：
MODFETs; millimeter wave technology; millimeter wave FET integrated circuits;
D O I：
10.1109/EMICC.2006.282742
中图分类号：
TM [电工技术]; TN [电子技术、通信技术];
学科分类号：
0808 ; 0809 ;
摘要：
We report on the latest results of millimeter-wave IC components realized using IAF's metamorphic HEMT technology, ranging from small-signal low-noise amplifiers to nonlinear applications such as power amplifiers and frequency converters. A G-band four-stage cascode amplifier MMIC achieves 21 dB gain at 220 GHz. At 155 GHz, a two-stage cascode design reaches 15 dB gain with a noise figure of 4 dB. Frequency conversion is demonstrated in a doubler, achieving more than 0 dBrn output power over the frequency range from 180 to 220 GHz. The same doubler is combined with a resistive mixer to form a G-band down-converter with as low as 10 dB conversion loss. At 94 GHz, a two-stage power amplifier MMIC achieves 23.3 dBm.
引用
收藏
页码：31 / +
页数：2
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