Fabrication of Pb(Zr,Ti)O-3 microscopic capacitors by electron beam lithography

被引：15

作者：

Hiratani, M ^{[1
]}

Okazaki, C ^{[1
]}

Hasegawa, H ^{[1
]}

Sugii, N ^{[1
]}

Tarutani, Y ^{[1
]}

Takagi, K ^{[1
]}

机构：

[1] HITACHI LTD,ADV RES LAB,HATOYAMA,SAITAMA 35003,JAPAN

来源：

JAPANESE JOURNAL OF APPLIED PHYSICS PART 1-REGULAR PAPERS SHORT NOTES & REVIEW PAPERS | 1997年 / 36卷 / 08期

关键词：

PZT; SrRuO3; ferroelectric memory devices; size effect; electron-beam lithography;

D O I：

10.1143/JJAP.36.5219

中图分类号：

O59 [应用物理学];

学科分类号：

摘要：

An epitaxial microscopic capacitor array of Pb(Zr, Ti)O-3/SrRuO3 with 0.5-to 2-mu m squares was fabricated by electron-beam lithography and Ar-ion etching on a SrTiO3(001) substrate. Atomic force microscopic observation revealed that line-and-spacing larger than 1 mu m assures adequate separation between capacitors. A thin barrier is formed on the terrace edge of the capacitors due to re-deposition of Ar-ion etched oxide.

引用

页码：5219 / 5220

页数：2

共 9 条

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