Preparation and photoluminescence of Sc-doped ZnO nanowires

被引：14

作者：

Zhou, SM ^{[1
]}

Zhang, XH ^{[1
]}

Meng, XM ^{[1
]}

Fan, X ^{[1
]}

Wu, SK ^{[1
]}

Lee, ST ^{[1
]}

机构：

[1] Chinese Acad Sci, Tech Inst Phys & Chem, Nanoorgan Photoelect Lab, Beijing 100101, Peoples R China

来源：

PHYSICA E-LOW-DIMENSIONAL SYSTEMS & NANOSTRUCTURES | 2005年 / 25卷 / 04期

基金：

中国博士后科学基金;

关键词：

doped II-VI semiconductor; nanostructure; photoluminescence;

D O I：

10.1016/j.physe.2004.09.016

中图分类号：

TB3 [工程材料学];

学科分类号：

0805 ; 080502 ;

摘要：

We demonstrate bulk synthesis of single-crystal Sc-doped ZnO nanowires by using (Sc+Zn) powders at 850degreesC. These mass nanowires are characterized through X-ray diffraction, scanning electron microscopy, energy dispersive Xray spectroscopy, transmission electron microscopy (TEM), selected area electron diffraction, and high-resolution TEM, which have uniform diameters of about 40 nm and microns of several decades in length. The growth of ZnScO nanowires is suggested for self-catalyzed vapor-liquid-solid. In particular, PL spectra of these nanowires show emission peaks that intensely shift to long wavelength with increasing Sc and the doping quantity is found responsible for the different characteristics, in which PL mechanism is explained in detail. (C) 2004 Elsevier B.V. All rights reserved.

引用

页码：587 / 591

页数：5

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