Ultraviolet excitonic laser action at room temperature in ZnO nanocrystalline epitaxial films

被引：22
作者：
Kawasaki, M
Ohtomo, A
Koinuma, H
Sakurai, Y
Yoshida, Y
Tang, ZK
Yu, P
Wang, GKL
Segawa, Y
机构：
[1] Tokyo Inst Technol, Dept Innovat & Engn Mat, Midori Ku, Yokohama, Kanagawa 226, Japan
[2] Tokyo Inst Technol, Mat & Struct Lab, Midori Ku, Yokohama, Kanagawa 226, Japan
[3] Sci & Technol Corp, CREST, Shinjuku 169, Japan
[4] Toyo Univ, Fac Engn, Kawagoe, Saitama 350, Japan
[5] Hong Kong Univ Sci & Technol, Dept Phys, Kowloon, Hong Kong
[6] Inst Phys & Chem Res, Photodynam Res Ctr, Aoba Ku, Sendai, Miyagi 980, Japan
来源：
SILICON CARBIDE, III-NITRIDES AND RELATED MATERIALS, PTS 1 AND 2 | 1998年 / 264-2卷
关键词：
ZnO nanocrystal; excitonic laser emission; natural cavity;
D O I：
10.4028/www.scientific.net/MSF.264-268.1459
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
We have observed ultraviolet laser emission at 3.2eV from optically pumped ZnO nanocrystal thin films at room temperature. ZnO films were epitaxially grown on sapphire substrates by laser molecular beam epitaxy. Closely packed and hexagonally shaped nanocrystals and well-defined grain boundaries were naturally formed. The grain boundaries between nanocrystals serve not only as barriers for confinement of excitons, but also as mirrors to form a Fabry-Perot cavity.
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收藏
页码：1459 / 1462
页数：4
相关论文
共 12 条
[1]  
Amano H, 1996, MATER RES SOC SYMP P, V395, P869
[2]   FREQUENCY AND DENSITY DEPENDENT RADIATIVE RECOMBINATION PROCESSES IN III-V SEMICONDUCTOR QUANTUM-WELLS AND SUPERLATTICES [J].
CINGOLANI, R ;
PLOOG, K .
ADVANCES IN PHYSICS, 1991, 40 (05) :535-623
[3]   JUNCTION LASERS WHICH OPERATE CONTINUOUSLY AT ROOM TEMPERATURE [J].
HAYASHI, I ;
PANISH, MB ;
FOY, PW ;
SUMSKI, S .
APPLIED PHYSICS LETTERS, 1970, 17 (03) :109-&
[4]   EXCITON INTERACTION IN PHOTOLUMINESCENCE FROM ZNO [J].
HVAM, JM .
PHYSICA STATUS SOLIDI B-BASIC RESEARCH, 1974, 63 (02) :511-517
[5]   QUANTUM-SIZE EFFECTS OF INTERACTING ELECTRONS AND HOLES IN SEMICONDUCTOR MICROCRYSTALS WITH SPHERICAL SHAPE [J].
KAYANUMA, Y .
PHYSICAL REVIEW B, 1988, 38 (14) :9797-9805
[6]  
Koinuma H, 1996, MATER RES SOC SYMP P, V397, P145
[7]   Room-temperature continuous-wave operation of InGaN multi-quantum-well structure laser diodes [J].
Nakamura, S ;
Senoh, M ;
Nagahama, S ;
Iwasa, N ;
Yamada, T ;
Matsushita, T ;
Sugimoto, Y ;
Kiyoku, H .
APPLIED PHYSICS LETTERS, 1996, 69 (26) :4056-4058
[8]  
OHTOMO A, 1997, IN PRESS J MAT SCI B
[9]   EPITAXIAL-GROWTH OF UNDOPED AND MG-DOPED GAN [J].
SANO, M ;
AOKI, M .
JAPANESE JOURNAL OF APPLIED PHYSICS, 1976, 15 (10) :1943-1950
[10]   Room-temperature stimulated emission in GaN/AlGaN separate confinement heterostructures grown by molecular beam epitaxy [J].
Schmidt, TJ ;
Yang, XH ;
Shan, W ;
Song, JJ ;
Salvador, A ;
Kim, W ;
Aktas, O ;
Botchkarev, A ;
Morkoc, H .
APPLIED PHYSICS LETTERS, 1996, 68 (13) :1820-1822
12