Low-Frequency noise investigation of AlGaN/GaN high-electron-mobility transistors

被引：6

作者：

Andrade, Maria Gloria Cano de ^{[1
]}

Bergamim, Luis Felipe de Oliveira ^{[1
]}

Baptista Junior, Braz ^{[1
]}

Nogueira, Carlos Roberto ^{[1
]}

da Silva, Fabio Alex ^{[1
]}

Takakura, Kenichiro ^{[2
]}

Parvais, Bertrand ^{[3
,4
]}

Simoen, Eddy ^{[3
]}

机构：

[1] Sao Paulo State Univ UNESP, Inst Sci & Technol, Av 3 Marco,511, BR-18087180 Sorocaba, Brazil

[2] Kumamoto Coll, Natl Inst Technol, Dept Informat Commun & Elect Engn, 2659-2 Suya, Kumamoto 8611102, Japan

[3] IMEC, Kapeldreef 75, B-3001 Leuven, Belgium

[4] Vrije Univ Brussels, Pleinlaan 2, B-1050 Brussels, Belgium

来源：

SOLID-STATE ELECTRONICS | 2021年 / 183卷

关键词：

HEMT; Low-frequency noise; GaN; AlGaN; High-temperature; 1/F NOISE; HEMTS; SCATTERING;

D O I：

10.1016/j.sse.2021.108050

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

In this paper, the noise Power Spectral Density (PSD) of AlGaN/GaN High-Electron-Mobility Transistors (HEMTs) has been experimentally investigated in linear operation (VD = 50 mV) for different channel lengths (L) and widths (W) at different temperatures (5.32 degrees C till 100 degrees C). The origin of the noise will be analyzed to understand the physical mechanisms involved. It is shown that the Low-Frequency (LF) noise is dominated by 1/f noise, originating from number fluctuations. Additionally, in shorter devices, a higher 1/f noise PSD is found. The LF noise characteristics indicate that the AlGaN/GaN HEMTs on silicon substrates can be a promising candidate for analog and Radio Frequency applications (RF).

引用

页数：5

共 22 条

[1]

Aadit MNA, 2017, DIFFERENT TYPES FIEL, P45, DOI DOI 10.5772/67796

[2] High-frequency measurements of AlGaN/GaN HEMTs at high temperatures [J].