Characterization of laser ablated AgInSe2 films

被引：0
|
作者：
Pathak, D. [1 ]
Bedi, R. K. [1 ]
Kaur, D. [2 ,3 ]
机构：
[1] Guru Nanak Dev Univ, Dept Phys, Amritsar, Punjab, India
[2] Indian Inst Technol Roorkee, Dept Phys, Roorkee, Uttar Pradesh, India
[3] Indian Inst Technol Roorkee, Ctr Nanotechnol, Roorkee, Uttar Pradesh, India
来源：
MATERIALS SCIENCE-POLAND | 2010年 / 28卷 / 01期
关键词：
pulse laser ablation; silicon wafers; heterojunction; FESEM; direct band gap materials; THIN-FILMS; EVAPORATION; VACUUM; GROWTH;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
AgInSe2 (AIS) thin films have been grown directly on silicon by means of a pulsed laser deposition technique. The X-ray diffraction studies show that the films are textured in the (112) direction. Increase of the substrate temperature results in a more ordered structure. Composition of the samples has been analysed by EDAX. It was found that the stoichiometry is better maintained with the PLD technique than with other traditional methods like thermal evaporation. The optical studies of the films show that the optical band gap is about 1.20 eV. The results of investigations may be of interest for a better understanding of the growth processes of chalcopyrite thin films on silicon materials.
引用
收藏
页码：199 / 205
页数：7
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