Room-temperature long-wavelength (λ=13.3μm) unipolar quantum dot intersubband laser

被引：17

作者：

Krishna, S ^{[1
]}

Bhattacharya, P

McCann, PJ

Namjou, K

机构：

[1] Univ Michigan, Dept Elect Engn & Comp Sci, Ann Arbor, MI 48109 USA

[2] Univ Oklahoma, Lab Elect Properties Mat, Norman, OK 73019 USA

来源：

ELECTRONICS LETTERS | 2000年 / 36卷 / 18期

关键词：

D O I：

10.1049/el:20001095

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

Long-wavelength (lambda = 13.3 mu m) unipolar lasing at 283 K from self-organised In0.4Ga0.6As/GaAs quantum dots. due to intersubband transitions in the conduction band, is demonstrated for the first time. The threshold current density under continuous wave operation is 1.1 kA/cm(2) for a 60 mu m x 1.2 mm broad-area plasmon-enhanced waveguide device and the maximum power output is similar or equal to 1 mu W. The longs intersubband relaxation time in quantum dots, together with the short lifetime in the ground state, due to interband stimulated emission. help to achieve the necessary population inversion and gain.

引用

页码：1550 / 1551

页数：2

共 8 条

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