Performance projections for ballistic graphene nanoribbon field-effect transistors

被引：213

作者：

Liang, Gengchiau ^{[1
]}

Neophytou, Neophytos

Nikonov, Dmitri E.

Lundstrom, Mark S.

机构：

[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA

[2] Intel Corp, Technol & Mfg Grp, Santa Clara, CA 95052 USA

来源：

IEEE TRANSACTIONS ON ELECTRON DEVICES | 2007年 / 54卷 / 04期

关键词：

ballistic; bandstructure; carbon; current density; graphite; MOSFET; nanotechnology; nanowire; quantum confinement;

D O I：

10.1109/TED.2007.891872

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

The upper limit performance potential of ballistic carbon nanoribbon MOSFETs (CNR MOSFETs) is examined. We calculate the bandstructure of nanoribbons using a single p(z)-orbital tight-binding method and evaluate the current-voltage characteristics of a nanoribbon MOSFET using a semiclassical ballistic model. We find that semiconducting ribbons. a few nanometers in width behave electronically in a manner similar to carbon nanotubes, achieving similar ON-current performance. Our calculations show that semiconducting CNR transistors can be candidates for high-mobility digital switches, with the potential to outperform the silicon MOSFET. Although wide ribbons have small bandgaps, which would increase subthreshold leakage due to band to band tunneling, their ON-current capabilities could still be attractive for certain applications.

引用

页码：677 / 682

页数：6

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