Design and comparative analysis of active-loaded differential amplifier using double-gate MOSFET

被引：1
作者：
Pillay, Suvashan [1 ]
Srivastava, Viranjay M. [1 ]
机构：
[1] Univ KwaZulu Natal, Howard Coll, Dept Elect Engn, ZA-4041 Durban, South Africa
来源：
SN APPLIED SCIENCES | 2022年 / 4卷 / 08期
关键词：
Double-gate MOSFET; Differential amplifier; Low-power design; Microelectronics; Nanotechnology; VLSI; REALIZATION; FABRICATION; MODEL; CMOS;
D O I：
10.1007/s42452-022-05100-1
中图分类号：
O [数理科学和化学]; P [天文学、地球科学]; Q [生物科学]; N [自然科学总论];
学科分类号：
07 ; 0710 ; 09 ;
摘要：
This research paper proposes the design of an active-loaded differential amplifier using the Double-Gate (DG) MOSFET. This differential amplifier employs feedback and simplifies a previously designed topology by reducing it to a single-ended output instead of a differential one. Other topologies have been referred to determine the benchmark of this design work. The DG MOSFET has been utilized for its high-frequency characteristics, Radio Frequency (RF) applications, and possible advantages in scalability. Electronic device simulation determines the technical feasibility of this differential amplifier using DG MOSFET. The designed differential amplifier exhibits a differential gain of 1.7-1.8 V/V and -3 dB cut-off frequency of 42 MHz. The amplifier can be used in various applications using this methodical design process and the circuital information.
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页数：15
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