A self-aligned process for high-voltage, short-channel vertical DMOSFETs in 4H-SiC

被引:73
作者
Matin, M [1 ]
Saha, A
Cooper, JA
机构
[1] Purdue Univ, Sch Elect & Comp Engn, W Lafayette, IN 47907 USA
[2] Purdue Univ, Birck Nanotechnol Ctr, W Lafayette, IN 47907 USA
关键词
counter-doping; DMOS; high-voltage MOSFET; nitric oxide (NO) anneal; self-aligned; short-channel; SiC;
D O I
10.1109/TED.2004.835622
中图分类号
TM [电工技术]; TN [电子技术、通信技术];
学科分类号
0808 ; 0809 ;
摘要
In this paper, we describe a self-aligned process to produce short-channel vertical power DMOSFETs in 4H-SiC. By reducing the channel length to less than or equal to0.5 mum, the specific on-resistance of the MOSFET channel is proportionally reduced, significantly enhancing performance.
引用
收藏
页码:1721 / 1725
页数:5
相关论文
共 46 条
[21]   Experimental analysis of planar edge terminations for high voltage 4H-SiC devices [J].
Soler, V. ;
Berthou, M. ;
Mihaila, A. ;
Montserrat, J. ;
Godignon, P. ;
Rebollo, J. ;
Millan, J. .
ESSDERC 2015 PROCEEDINGS OF THE 45TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE, 2015, :68-71
[22]   High Temperature Compensated Voltage Reference Integrated Circuits on 4H-SiC Material [J].
Banu, Viorel ;
Godignon, Philippe ;
Alexandru, Mihaela ;
Montserrat, Josep ;
Jorda, Xavier ;
Millan, Jose .
ROMANIAN JOURNAL OF INFORMATION SCIENCE AND TECHNOLOGY, 2014, 17 (04) :417-432
[23]   High Channel Mobility 4H-SiC MOSFETs by Antimony Counter-Doping [J].
Modic, Aaron ;
Liu, Gang ;
Ahyi, Ayayi C. ;
Zhou, Yuming ;
Xu, Pingye ;
Hamilton, Michael C. ;
Williams, John R. ;
Feldman, Leonard C. ;
Dhar, Sarit .
IEEE ELECTRON DEVICE LETTERS, 2014, 35 (09) :894-896
[24]   The effect of different transport models in simulation of high frequency 4H-SiC and 6H-SiC vertical MESFETs [J].
Bertilsson, K ;
Nilsson, HE ;
Hjelm, M ;
Petersson, CS ;
Käckell, P ;
Persson, C .
SOLID-STATE ELECTRONICS, 2001, 45 (05) :645-653
[25]   Categorization of PBTI Mechanisms on 4H-SiC MOSFETs by the Stress Gate Voltage and Channel Plane Orientation [J].
Watanabe, Tomokatsu ;
Fukui, Yutaka ;
Hino, Shiro ;
Tomohisa, Shingo ;
Miura, Naruhisa ;
Nishikawa, Kazuyasu .
IEEE TRANSACTIONS ON DEVICE AND MATERIALS RELIABILITY, 2023, 23 (01) :99-108
[26]   Inkjet-Printed Self-Aligned Short-Channel Metal-Oxide Thin-Film Transistors Based on Coffee Stripe Dewetting Method [J].
Li, Yuzhi ;
Lan, Linfeng ;
Gao, Peixiong ;
He, Penghui ;
Dai, Xingqiang ;
Cao, Hongtao ;
Liang, Lingyan ;
Peng, Junbiao .
IEEE ELECTRON DEVICE LETTERS, 2019, 40 (02) :228-231
[27]   Comparison of high-voltage 4H-SiC insulated-gate bipolar transistor (IGBT) and MOS-gated bipolar transistor (MGT) [J].
Zhu, L ;
Balachandran, S ;
Chow, TP .
SILICON CARBIDE AND RELATED MATERIALS 2004, 2005, 483 :917-920
[28]   High-Temperature Static and Dynamic Reliability Study of 4H-SiC Vertical-Channel JFETs for High-Power System Applications [J].
Cheng, L. ;
Martin, P. ;
Mazzola, M. S. ;
Sheridan, D. C. ;
Kelly, R. L. ;
Bondarenko, V. ;
Morrison, S. ;
Gray, R. ;
Tian, G. ;
Scofield, J. D. ;
Casady, J. R. B. ;
Casady, J. B. .
SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2, 2009, 600-603 :1051-+
[29]   High temperature static and dynamic characteristics of 3.7kV high voltage 4H-SiC JBS [J].
Asano, K ;
Hayashi, T ;
Saito, R ;
Sugawara, Y .
12TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS - PROCEEDINGS, 2000, :97-100
[30]   A Compact and Cost-efficient Edge Termination Design for High Voltage 4H-SiC Devices [J].
Dai, T. ;
Zhang, L. ;
Vavasour, O. ;
Renz, A. B. ;
Cao, Q. ;
Shah, V. A. ;
Mawby, P. A. ;
Antoniou, M. ;
Gammon, P. M. .
2021 33RD INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD), 2021, :251-254