共 46 条
[21]
Experimental analysis of planar edge terminations for high voltage 4H-SiC devices
[J].
ESSDERC 2015 PROCEEDINGS OF THE 45TH EUROPEAN SOLID-STATE DEVICE RESEARCH CONFERENCE,
2015,
:68-71
[22]
High Temperature Compensated Voltage Reference Integrated Circuits on 4H-SiC Material
[J].
ROMANIAN JOURNAL OF INFORMATION SCIENCE AND TECHNOLOGY,
2014, 17 (04)
:417-432
[27]
Comparison of high-voltage 4H-SiC insulated-gate bipolar transistor (IGBT) and MOS-gated bipolar transistor (MGT)
[J].
SILICON CARBIDE AND RELATED MATERIALS 2004,
2005, 483
:917-920
[28]
High-Temperature Static and Dynamic Reliability Study of 4H-SiC Vertical-Channel JFETs for High-Power System Applications
[J].
SILICON CARBIDE AND RELATED MATERIALS 2007, PTS 1 AND 2,
2009, 600-603
:1051-+
[29]
High temperature static and dynamic characteristics of 3.7kV high voltage 4H-SiC JBS
[J].
12TH INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES & ICS - PROCEEDINGS,
2000,
:97-100
[30]
A Compact and Cost-efficient Edge Termination Design for High Voltage 4H-SiC Devices
[J].
2021 33RD INTERNATIONAL SYMPOSIUM ON POWER SEMICONDUCTOR DEVICES AND ICS (ISPSD),
2021,
:251-254