The X-ray Radiation Response of CdZnTe Crystal Nuclear Detector

被引：0

作者：

Dai, X. Y. ^{[1
]}

Meng, H. ^{[1
]}

Zhang, Y. L. ^{[1
]}

Tao, J. ^{[1
]}

Xu, R. ^{[1
]}

Zhang, J. J. ^{[1
]}

Huang, J. ^{[1
]}

Wang, L. ^{[1
]}

Tang, K. ^{[1
]}

Min, J. H. ^{[1
]}

Wang, L. J. ^{[1
]}

机构：

[1] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 444, Peoples R China

来源：

PROCEEDINGS OF THE 2015 INTERNATIONAL CONFERENCE ON INDUSTRIAL TECHNOLOGY AND MANAGEMENT SCIENCE (ITMS 2015) | 2015年 / 34卷

关键词：

CdZnTe; radiation response; radiation damage; ELECTROLESS DEPOSITION; SURFACE; PERFORMANCE; CONTACTS; AU;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

The X-ray radiation response and radiation damage of CdZnTe (CZT) detector were studied in this paper. After rapid temperature annealing, the linearity of I-V curve was much better than before. Photo current of Au/CZT planar detector increased linearly with the X-ray intensity. An inflection point around 1030 V was observed for different X-ray intensity. Below the inflection points, with the increase of applied voltage, photon current increased linearly, while the current still increased after the inflection point likely due to the illumination-related impact ionization effect. In addition, under exposure in strong X-ray intensity, the photo current remains unchanged before the inflection point while it changes significantly with after the inflection point.

引用

页码：1296 / 1299

页数：4

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