The X-ray Radiation Response of CdZnTe Crystal Nuclear Detector

被引：0
|
作者：
Dai, X. Y. [1 ]
Meng, H. [1 ]
Zhang, Y. L. [1 ]
Tao, J. [1 ]
Xu, R. [1 ]
Zhang, J. J. [1 ]
Huang, J. [1 ]
Wang, L. [1 ]
Tang, K. [1 ]
Min, J. H. [1 ]
Wang, L. J. [1 ]
机构：
[1] Shanghai Univ, Sch Mat Sci & Engn, Shanghai 444, Peoples R China
来源：
PROCEEDINGS OF THE 2015 INTERNATIONAL CONFERENCE ON INDUSTRIAL TECHNOLOGY AND MANAGEMENT SCIENCE (ITMS 2015) | 2015年 / 34卷
关键词：
CdZnTe; radiation response; radiation damage; ELECTROLESS DEPOSITION; SURFACE; PERFORMANCE; CONTACTS; AU;
D O I：
暂无
中图分类号：
T [工业技术];
学科分类号：
08 ;
摘要：
The X-ray radiation response and radiation damage of CdZnTe (CZT) detector were studied in this paper. After rapid temperature annealing, the linearity of I-V curve was much better than before. Photo current of Au/CZT planar detector increased linearly with the X-ray intensity. An inflection point around 1030 V was observed for different X-ray intensity. Below the inflection points, with the increase of applied voltage, photon current increased linearly, while the current still increased after the inflection point likely due to the illumination-related impact ionization effect. In addition, under exposure in strong X-ray intensity, the photo current remains unchanged before the inflection point while it changes significantly with after the inflection point.
引用
收藏
页码：1296 / 1299
页数：4
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