Microanalysis of Pd and V-doped TiO2 thin films prepared by sputtering

被引:10
作者
Kaczmarek, D. [1 ]
Domaradzki, J. [1 ]
Borkowska, A. [1 ]
机构
[1] Wroclaw Tech Univ, Fac Microsyst Elect & Photon, PL-50372 Wroclaw, Poland
关键词
titanium oxide; oxide semiconductor; sputtering; structural properties;
D O I
10.1016/j.tsf.2006.11.083
中图分类号
T [工业技术];
学科分类号
08 ;
摘要
Thin films of TiO2 doped with vanadium and palladium, prepared by the magnetron sputtering method, were studied by means of X-ray diffraction (XRD), Scanning Electron Microscopy with Energy Disperse Spectrometer (SEM-EDS) and Atomic Force Microscopy (AFM). Investigations have brought important information about microstructure due to dopant incorporation in the TiO2 host lattice. Directly after deposition thin films were XRD-amorphous and SEM investigations did not reveal details on the microstructure. Analysis of the topography of prepared thin films required application of Atomic Force Microscope. The AFM images show that as-deposited sample was dense with grain sizes varied in the range of 5.5 nm-10 nm, that indicated high quality nanocrystalline behavior. Additional annealing results in the formation of three phases in the thin film, e.g. (Ti,V)O-2 - solid solution, PdO and metallic inclusions of Pd. SEM-EDS system allowed analysis of the elemental composition, especially the V one, which lines have not been evidenced in the XRD diffraction pattern. EDS maps show homogenous distribution of elements Ti, 0, V, Pd in prepared thin films. (C) 2006 Elsevier B.V. All rights reserved.
引用
收藏
页码:6347 / 6349
页数:3
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