Epitaxial PLT thin films prepared by a sol-gel process

被引：0

作者：

Zhou, QF ^{[1
]}

Chan, HLW

Zhang, QQ

Choy, CL

机构：

[1] Hong Kong Polytech Univ, Dept Appl Phys, Kowloon, Hong Kong, Peoples R China

[2] Hong Kong Polytech Univ, Mat Res Ctr, Kowloon, Hong Kong, Peoples R China

来源：

FERROELECTRICS | 1999年 / 232卷 / 1-4期

关键词：

epitaxy; thin film; sol-gel;

D O I：

暂无

中图分类号：

T [工业技术];

学科分类号：

08 ;

摘要：

Lead lanthanum titanate (PLT) ferroelectric thin films with (001) orientation have been epitaxially grown on La0.5Sr0.5CoO3(LSCO)/LaALO(3)(LAO) substrates by a sol-gel process followed by rapid annealing at 650 degreesC. PLT(111) films have also been successfully prepared on Pt(111)Ti/SiO2/Si substrates. 2 theta scans, phi scans and rocking curves obtained in x-ray diffraction measurements reveal the high epitaxy of these films. The PLT (111) films exhibit good dielectric and ferroelectric properties and may be useful as infrared sensors.

引用

页码：933 / 938

页数：6

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