Highly anisotropic silicon and polysilicon room-temperature etching using fluorine-based high density plasmas

被引：17

作者：

Tserepi, A ^{[1
]}

Gogolides, E

Cardinaud, C

Rolland, L

Turban, G

机构：

[1] NCSR Demokritos, Inst Microelect, IMEL, Aghia Paraskevi 15310, Greece

[2] Univ Nantes, CNRS, Inst Mat Nantes, F-44322 Nantes, France

来源：

MICROELECTRONIC ENGINEERING | 1998年 / 42卷

关键词：

D O I：

10.1016/S0167-9317(98)00095-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A highly anisotropic Si and Polysilicon plasma etching process at room temperature has been developed in an inductively coupled plasma (ICP) reactor using SF6/CHF3 gas mixtures. The etching rates achieved are much higher than those obtained in a reactive ion etching reactor (RIE), using a similar F-based room temperature process. Etched structures are analysed by SEM and surface chemical analysis (ESCA), while the plasma gas phase is analysed by Optical Emission Spectroscopy (OES).

引用

页码：411 / 414

页数：4

共 50 条

[31] Ultrafast Room-Temperature Nanofabrication via Ozone-Based Gas-Phase Metal-Assisted Chemical Etching for High-Performance Silicon Photodetectors
Cho, Hyein
Han, Yejin
Kim, Geonhwi
Jeong, Jihwan
Lee, Seongmin
Ahn, Yebin
Hong, Sang Beom
Park, Soohyeok
Park, Inkyeong
Jang, So Eun
Youn, Duck Hyun
Um, Han-Don
ADVANCED FUNCTIONAL MATERIALS, 2025,
[32] Si Nanoribbons based High Performance Printed FETs using Room-Temperature deposited Dielectric
Zumeit, Ayoub
Shakthivel, Dhayalan
Dahiya, Ravinder
2020 IEEE INTERNATIONAL CONFERENCE ON FLEXIBLE AND PRINTABLE SENSORS AND SYSTEMS (IEEE FLEPS 2020), 2020,
[33] High-etch rate processes for performing deep, highly anisotropic etches in silicon carbide using inductively coupled plasma etching
Ozgur, Mehmet
Huff, Michael
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY B, 2017, 35 (04):
[34] Highly Resolved Morphology of Room-Temperature Columnar Liquid Crystals Derived from Triphenylene and Multialkynylbenzene Using Reconstructed Electron Density Maps
Gupta, Santosh Prasad
Gupta, Monika
Pal, Santanu Kumar
CHEMISTRYSELECT, 2017, 2 (21): : 6070 - 6077
[35] Preparation of highly transparent, room-temperature self-healing and recyclable silicon elastomers based on dynamic imine bond and their ion responsive properties
Lei, Xingyue
Huang, Yawen
Liang, Shuai
Zhao, Xiuli
Liu, Lili
MATERIALS LETTERS, 2020, 268 (268)
[36] Deep anisotropic etching of GaAs with chlorine-based chemistries and SU-8 mask using RIE and high density ICP etching methods
Chiang, YMJ
Lau, J
Bachman, M
Li, GP
Kim, HK
Ra, YJ
Ketola, K
BIOMEMS AND BIONANOTECHNOLOGY, 2002, 729 : 77 - 82
[37] High-temperature anisotropic silicon-etching steered synthesis of horizontally aligned silicon-based Zn2SiO4 nanowires
Wang, Hongqiang
Li, Guanghai
Jia, Lichao
Li, Liang
Wang, Guozhong
CHEMICAL COMMUNICATIONS, 2009, (25) : 3786 - 3788
[38] High strength, recyclable, durable polydimethylsiloxanes based on carboxylic acid aromatic disulfides with highly efficient room-temperature self-healing
Dong, Hao
Yang, Xing
Huang, Wenjie
Gao, Jiefeng
Zha, Jun-wei
POLYMER, 2025, 320
[39] Room-temperature operation of highly functional single-electron transistor logic based on quantum mechanical effect in ultra-small silicon dot
Saitoh, M
Hiramoto, T
2003 IEEE INTERNATIONAL ELECTRON DEVICES MEETING, TECHNICAL DIGEST, 2003, : 753 - 756
[40] Silicon nitride etching in high- and low-density plasmas using SF6/O2/N2 mixtures
Reyes-Betanzo, C
Moshkalyov, SA
Swart, JW
Ramos, ACS
JOURNAL OF VACUUM SCIENCE & TECHNOLOGY A, 2003, 21 (02): : 461 - 469

← 1 2 3 4 5 →