Highly anisotropic silicon and polysilicon room-temperature etching using fluorine-based high density plasmas

被引：17

作者：

Tserepi, A ^{[1
]}

Gogolides, E

Cardinaud, C

Rolland, L

Turban, G

机构：

[1] NCSR Demokritos, Inst Microelect, IMEL, Aghia Paraskevi 15310, Greece

[2] Univ Nantes, CNRS, Inst Mat Nantes, F-44322 Nantes, France

来源：

MICROELECTRONIC ENGINEERING | 1998年 / 42卷

关键词：

D O I：

10.1016/S0167-9317(98)00095-1

中图分类号：

TM [电工技术]; TN [电子技术、通信技术];

学科分类号：

0808 ; 0809 ;

摘要：

A highly anisotropic Si and Polysilicon plasma etching process at room temperature has been developed in an inductively coupled plasma (ICP) reactor using SF6/CHF3 gas mixtures. The etching rates achieved are much higher than those obtained in a reactive ion etching reactor (RIE), using a similar F-based room temperature process. Etched structures are analysed by SEM and surface chemical analysis (ESCA), while the plasma gas phase is analysed by Optical Emission Spectroscopy (OES).

引用

页码：411 / 414

页数：4

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