Wafer-level measurement of thermal conductivity on thin films
被引:0
作者:
Roncaglia, Alberto
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机构:
CNR, Natl Res Council, Bologna Unit, IMM, I-40126 Bologna, ItalyCNR, Natl Res Council, Bologna Unit, IMM, I-40126 Bologna, Italy
Roncaglia, Alberto
[1
]
Mancarella, Fulvio
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机构:
CNR, Natl Res Council, Bologna Unit, IMM, I-40126 Bologna, ItalyCNR, Natl Res Council, Bologna Unit, IMM, I-40126 Bologna, Italy
Mancarella, Fulvio
[1
]
Sanmartin, Michele
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机构:
CNR, Natl Res Council, Bologna Unit, IMM, I-40126 Bologna, ItalyCNR, Natl Res Council, Bologna Unit, IMM, I-40126 Bologna, Italy
Sanmartin, Michele
[1
]
Elmi, Ivan
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机构:
CNR, Natl Res Council, Bologna Unit, IMM, I-40126 Bologna, ItalyCNR, Natl Res Council, Bologna Unit, IMM, I-40126 Bologna, Italy
Elmi, Ivan
[1
]
Cardinali, Gian Carlo
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CNR, Natl Res Council, Bologna Unit, IMM, I-40126 Bologna, ItalyCNR, Natl Res Council, Bologna Unit, IMM, I-40126 Bologna, Italy
Cardinali, Gian Carlo
[1
]
Severi, Maurizio
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机构:
CNR, Natl Res Council, Bologna Unit, IMM, I-40126 Bologna, ItalyCNR, Natl Res Council, Bologna Unit, IMM, I-40126 Bologna, Italy
Severi, Maurizio
[1
]
机构:
[1] CNR, Natl Res Council, Bologna Unit, IMM, I-40126 Bologna, Italy
来源:
2006 IEEE SENSORS, VOLS 1-3
|
2006年
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D O I:
暂无
中图分类号:
O42 [声学];
学科分类号:
070206 ;
082403 ;
摘要:
A method suited to perform wafer-level measurements of thermal conductivity on thin films by exploiting micromachined test structures is proposed. To this purpose, a measurement procedure able to compensate for instrumental offsets and sensitivity limits typically existing in a standard wafer-level electrical instrumentation, and to eliminate the influence of heat exchange through air is applied. In order to validate the technique, measurements on different thin films of interest in thermal MEMS fabrication are presented (LPCVD polycrystalline silicon, evaporated aluminum, LPCVD silicon oxide).