GaN Power Amplifiers Design Using Efficient GA-ANN Dynamic Nonlinear Model
被引:0
作者:
Jarndal, Anwar
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机构:
Univ Sharjah, Elect Engn Dept, Sharjah, U Arab EmiratesUniv Sharjah, Elect Engn Dept, Sharjah, U Arab Emirates
Jarndal, Anwar
[1
]
Hamza, Husna K.
论文数: 0引用数: 0
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机构:
Karunya Inst Technol & Sci, Coimbatore, Tamil Nadu, IndiaUniv Sharjah, Elect Engn Dept, Sharjah, U Arab Emirates
Hamza, Husna K.
[2
]
机构:
[1] Univ Sharjah, Elect Engn Dept, Sharjah, U Arab Emirates
[2] Karunya Inst Technol & Sci, Coimbatore, Tamil Nadu, India
来源:
2021 14TH INTERNATIONAL CONFERENCE ON DEVELOPMENTS IN ESYSTEMS ENGINEERING (DESE)
|
2021年
关键词:
GaN HEMT;
nonlinear model;
genetic algorithm;
neural network;
power amplifier;
ALGAN/GAN HEMTS;
D O I:
10.1109/DESE54285.2021.9719341
中图分类号:
TP18 [人工智能理论];
学科分类号:
081104 ;
0812 ;
0835 ;
1405 ;
摘要:
This paper demonstrates the applicability of inhouse developed Genetic-Algorithm (GA) based Neural Network (NN) model for designing linear-and switching-mode power amplifiers. The modeling procedure was applied on 1-mm GaN HEMT and the developed model was implemented on Advanced-Design-System (ADS) Computer-Aided Design (CAD) software. It is used to design class-AB, class E and class F amplifiers at the frequency of 6 GHz and 10 GHz. The designed Class AB power amplifier at 6 GHz exhibited a maximum gain of 12.4 dB and maximum power added efficiency of 56%. The same amplifier achieved a maximum power added efficiency of 40 % at 10 GHz frequency of operation. The amplifier power added efficiency was then improved using Doherty technique to obtain 78% at 6 GHz and 72% at 10 GHz. The model was also demonstrated by implementing switching-mode Class E and Class F power amplifiers. The results of this paper validate the applicability of our proposed model for the design of linear and nonlinear application circuits.
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页码:413 / 417
页数:5
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Borges R., 2003, Compound Semiconductor, V9, P22
机构:
Seoul Natl Univ, Inst New Media & Commun, Dept Elect & Comp Engn, Seoul 151742, South KoreaSeoul Natl Univ, Inst New Media & Commun, Dept Elect & Comp Engn, Seoul 151742, South Korea
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Nam, Hyosung
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Hanyang Univ, Div Elect Engn, Ansan 426791, South KoreaSeoul Natl Univ, Inst New Media & Commun, Dept Elect & Comp Engn, Seoul 151742, South Korea
Nam, Hyosung
Choi, Kwangseok
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Seoul Natl Univ, Inst New Media & Commun, Dept Elect & Comp Engn, Seoul 151742, South KoreaSeoul Natl Univ, Inst New Media & Commun, Dept Elect & Comp Engn, Seoul 151742, South Korea
Choi, Kwangseok
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Kim, Junghyun
Kwon, Youngwoo
论文数: 0引用数: 0
h-index: 0
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Seoul Natl Univ, Inst New Media & Commun, Dept Elect & Comp Engn, Seoul 151742, South KoreaSeoul Natl Univ, Inst New Media & Commun, Dept Elect & Comp Engn, Seoul 151742, South Korea
机构:
Seoul Natl Univ, Inst New Media & Commun, Dept Elect & Comp Engn, Seoul 151742, South KoreaSeoul Natl Univ, Inst New Media & Commun, Dept Elect & Comp Engn, Seoul 151742, South Korea
Park, Hongjong
Nam, Hyosung
论文数: 0引用数: 0
h-index: 0
机构:
Hanyang Univ, Div Elect Engn, Ansan 426791, South KoreaSeoul Natl Univ, Inst New Media & Commun, Dept Elect & Comp Engn, Seoul 151742, South Korea
Nam, Hyosung
Choi, Kwangseok
论文数: 0引用数: 0
h-index: 0
机构:
Seoul Natl Univ, Inst New Media & Commun, Dept Elect & Comp Engn, Seoul 151742, South KoreaSeoul Natl Univ, Inst New Media & Commun, Dept Elect & Comp Engn, Seoul 151742, South Korea
Choi, Kwangseok
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机构:
Kim, Junghyun
Kwon, Youngwoo
论文数: 0引用数: 0
h-index: 0
机构:
Seoul Natl Univ, Inst New Media & Commun, Dept Elect & Comp Engn, Seoul 151742, South KoreaSeoul Natl Univ, Inst New Media & Commun, Dept Elect & Comp Engn, Seoul 151742, South Korea