GaN Power Amplifiers Design Using Efficient GA-ANN Dynamic Nonlinear Model

被引:0
作者
Jarndal, Anwar [1 ]
Hamza, Husna K. [2 ]
机构
[1] Univ Sharjah, Elect Engn Dept, Sharjah, U Arab Emirates
[2] Karunya Inst Technol & Sci, Coimbatore, Tamil Nadu, India
来源
2021 14TH INTERNATIONAL CONFERENCE ON DEVELOPMENTS IN ESYSTEMS ENGINEERING (DESE) | 2021年
关键词
GaN HEMT; nonlinear model; genetic algorithm; neural network; power amplifier; ALGAN/GAN HEMTS;
D O I
10.1109/DESE54285.2021.9719341
中图分类号
TP18 [人工智能理论];
学科分类号
081104 ; 0812 ; 0835 ; 1405 ;
摘要
This paper demonstrates the applicability of inhouse developed Genetic-Algorithm (GA) based Neural Network (NN) model for designing linear-and switching-mode power amplifiers. The modeling procedure was applied on 1-mm GaN HEMT and the developed model was implemented on Advanced-Design-System (ADS) Computer-Aided Design (CAD) software. It is used to design class-AB, class E and class F amplifiers at the frequency of 6 GHz and 10 GHz. The designed Class AB power amplifier at 6 GHz exhibited a maximum gain of 12.4 dB and maximum power added efficiency of 56%. The same amplifier achieved a maximum power added efficiency of 40 % at 10 GHz frequency of operation. The amplifier power added efficiency was then improved using Doherty technique to obtain 78% at 6 GHz and 72% at 10 GHz. The model was also demonstrated by implementing switching-mode Class E and Class F power amplifiers. The results of this paper validate the applicability of our proposed model for the design of linear and nonlinear application circuits.
引用
收藏
页码:413 / 417
页数:5
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